Fabrication Study on Poly-Si TFT for AMLCD with Heating Plate Crystallization
| Autor: | Ssu-Han Wu, 吳思漢 |
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| Rok vydání: | 2005 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 93 In this thesis, discuss the different metal location effects the heating plate crystallization, the best way of the thermal energy transfer is bottom gate structure. By the way, different gate dielectrics may transport thermal energies with different rates. After the HPC process, the gate dielectrics will transport the thermal energy to the amorphous Si film, and recrystallizing the amorphous Si film into the poly-silicon film. However, if the gate dielectrics transports the thermal energy too fast, it will result in the film peeling problem. On the other hand, we also compare capping N+ layer and without capping N+ layer effect of the recrystallization. After HPC, We find that while capping N+ layer the crystallization temperature will reduce. The major reason of the recrystallization is bottom gate and N+ layer will absorb the thermal energy to enhance recrystallization. In the pattern effects the heating plate crystallization, we find that the thermal energy selectively absorbed by the gate patterns can be fully transferred to the pre-patterned Si active region. The energy of crystallization radiated from the gate electrode can then be fully transferred to the island-in Si active region and does not share with the other portions as in the conventional TFT structures. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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