The Physical Properties of Amorphous InGaZnO4 Transparent Conducting Thin Films and the Fabrication of Thin Film Transistors Thereof
| Autor: | Jian-Li Chen, 陳建利 |
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| Rok vydání: | 2005 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 93 In this thesis, we study the physical characteristics of amorphous InGaZnO thin film fabricated by pulsed laser deposition. The target used is a sintered stoichiometric InGaZnO bulk disk and the substrates used were glass substrates maintaining at temperature ranging from ambient to 300℃. All films obtained in the current study are amorphous, as revealed by x-ray diffraction measurements. Nonetheless, all film display a carrier mobility greater than 20 and have over 80％ of transparency in the visible light range. The oxygen partial pressure present during deposition appears to have significant effects on both film resistivity and carrier concentration. However, it seems that the mobility is immune from variation of deposition temperature and oxygen partial pressure. The photoluminescence and temperature dependent resistance analyses reveal that the amorphous films are probably not semiconductor in nature, instead the carrier transport is more likely governed by two- dimensional to three-dimensional variable range hopping mechanism. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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