Floating-Anode ESD Protection Device for High-Voltage IC
| Autor: | Xi-Hong Liu, 劉士弘 |
|---|---|
| Rok vydání: | 2006 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 94 A floating-anode SCR and lateral SCR fabricated in 0.6 CMOS process were investigated by the device simulation tool. These simulated electrical characteristics conform to the experimental results successfully. The I-V result of the floating-anode SCR indicates its 15.6V holding-voltage (Vh) has latch-up free immunity as compared with the lateral SCR and also a good 4KV ESD performance. And most importantly, the key factor in the operation of this floating anode SCR is the floating P+ anode. The hot spot had occurred near the anode of the floating-anode SCR because both electron and hole current flow through this electrode. The actual operation of the floating-anode SCR is controlled by the buried SCR in series with a reverse-biased diode as well as parasitic NPN BJT in the substrate. Additionally, the gate-coupled floating-electrode SCR (GCFSCR) is developed based on the floating-anode SCR. The anode or cathode will be floated during IC normal operation and it leads the GCFSCR to avoid turn-on accidentally. Hence, the holding voltage will raise and the latchup immunity be improved. The RC circuit is similar to a low-pass or high-pass filter, it can be used to differentiate the frequency response of the ESD or latchup noise. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|