The study of single and dual junction III-V solar cells
| Autor: | Zun-Hao Shih, 施圳豪 |
|---|---|
| Rok vydání: | 2005 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 93 The object of this study is to fabricate a series interconnected GaAs and InGaP solar cells respectively and particularly focuses on optimizing the most important part of these solar cells, base layer. For semiconductor devices, the carrier concentration influences the electrical properties of the materials. Both the short-circuit current and open-circuit voltage of the solar cell decreases with increasing carrier concentration. In addition, the layer thickness is another essential issue of the output electrical characteristics of device. A thicker layer will absorb more quantity of incident light, but too thick a layer causes an increase in both series resistance and dark current, which will degenerate the performance of the device. We found the optimum values for the thickness and concentration of the device’s active layer through this study. The DJ solar cell is made up of GaAs and InGaP SJ solar cell in series connection. The current mismatching between InGaP and GaAs subcells limits the total photocurrent of the device. We took the results of the SJ solar cell experiments as the references for the DJ solar cell design and the main experiment variable was the base layer thickness of InGaP subcell. By varying base layer thickness and using laser light-bias I-V measurement, one could find the current limited cell clearly and the optimal design of the device. The current-voltage (I-V), external quantum efficiency (EQE) and thermal stability characteristics of the fabricated solar cells were measured by ISO-standard Simulator and homemade spectral response measurement system, respectively, at room and various temperatures. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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