Characteristics of Gd2O3 Gate Dielectric Deposited by Reactive RF-sputterin
| Autor: | Hui-Hsin Hsu, 許惠欣 |
|---|---|
| Rok vydání: | 2005 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 93 According to the ITRS (International Technology Roadmap for Semiconductor), the dimension of devices were scaling down focus on the channel and gate silicon dioxide thickness to be decreased decrease rapidly. It would face several problems. As the oxide thickness less than 3nm, the gate leakage current and boron penetration through oxide are more seriously to influence the properties of devices. In order to resolve these questions, that the replacement of SiO2 was required by High-k dielectric materials and I researched extensively, such as Ta2O5, Al2O3, HfO2, Gd2O3 ..etc. However, the thermal stability in contact with Si is a challenge for high-k gate dielectrics due to the crystallization during the thermal processes. The formation of interfacial layer and silicides would depend on the deposition conditions. In this thesis, I figured out that the first time gadolinium dioxide was deposited on Si substrate by RF-sputtering then investigated the properties and hysteresis phenomenon with rapid thermal annealing. We found this thin film exhibits excellent electrical properties such as improved hysteresis phenomenon, frequency dispersion and a higher breakdown voltage. In addition, the decrease of the EOT under high-temperature annealing is due to the densification of gadolinium dioxide film, making the dielectric film more stoichiometric. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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