Study on the Electronic Properties of In0.22Ga0.78As/GaAs Single Quantum Wells
| Autor: | Jau-Rung Lian, 連昭榮 |
|---|---|
| Rok vydání: | 2004 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 92 We haved studied the magneto-transport properties of two dimensional electron gas (2DEG) in Si δ-doped In0.22Ga0.78As/AlGaAs single quantum wells ( QWs ) by using Shubnikov-de Haas ( SdH ) measurements. From the SdH measurement, we can clearly observe the SdH oscillations and obtain the SdH frequencies. It indicates the 2DEG in these QWs was confirmed. We also obtain the deep level binding energies： 104.4 meV and 9.6 meV for sample 1 and 50.2meV for sample2 by T-dependent Van der Pauw Hall effect measure- ment at magnetic field 0.3T. The difference of these two samples was the In0.1Ga0.9As layer of sample 2 was inserted between In0.22Ga0.78As well and the GaAs spacers. So in this paper, we tried to propose a model to interpret the deep-level traps in the QWs and studied the effect of In0.1Ga0.9As inserted-layer on the In0.22Ga0.78As/GaAs Single Quantum Wells. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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