Characteristics of Defects and Naoncrystallite Silicon in Silicon Implanted Silicon Dioxide
| Autor: | Kuo-Cheng Yu, 余國正 |
|---|---|
| Rok vydání: | 2004 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 92 This thesis investigated the characteristics of defects and nanocrystallite silicon (nc-Si) in the silicon-ion-implanted dioxide (SiO2:Si+) and the semi-conducting properties of the SiO2:Si+ with 1 to 3-hrs furnace-annealing processes at 1100oC. The pumping-intensity dependency of nc-Si related micro-photoluminescence (m-PL) from the multi-recipe Si-implanted quartz is characterized. After annealing at 1100oC for three hours, the intensity of m-PL at 724 nm contributed by nc-Si with a diameter of about 4 nm is the maximum. By increasing the pumping intensity from 10 kW/cm2 to 300 kW/cm2, the m-PLs of 1-hr and 3-hr annealed Si-implanted quartz samples are red-shifted by |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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