Research on CMOS RF MEMS Switches and 2-GHz/5-GHz VCO RFICs for Wireless Communication Applications
| Autor: | Hsiao-Tung Lin, 林曉彤 |
|---|---|
| Rok vydání: | 2004 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 92 This thesis presents the research on CMOS RF MEMS switches and 2-GHz/5-GHz complementary and differentially tuned MOS-varactors CMOS VCO for wireless communication applications. The MEMS switch is fabricated in a TSMC standard 0.25um CMOS process and then post processed by surface micromachining in MEMS technology. Dry etching removes the IMD3 and IMD4 in the 0.25um CMOS process to release the structure layer composed of Metal3, Metal4 and Metal5. Due to the ICP machine problem, the post process cannot be finished. Here only measurement results of the return loss and insertion loss without post process are presented. The fabricated MEMS switch at ON-state exhibits a return loss from 9.8dB to 18.4dB and an insertion loss from 0.9 dB to 4.8 dB, respectively, while operating from 1 to 10GHz. The CMOS VCO are fabricated in TSMC standard 0.25um and 0.18um process. The 2GHz complementary VCO exhibits an output frequency from 1970 to 2128MHz, an output power of 7.4 dBm, and a phase noise is –101dBc/Hz@100kHz. The 2GHz complementary VCO with differentially tuned MOS varactors exhibits an output frequency from 1827 to 2136MHz, an output power of 8.2 dBm, and a phase noise is –100.2dBc/Hz@100kHz. The 5GHz VCO with differentially tuned MOS varactors exhibits an output frequency from 4517 to 4782MHz with phase noise of –91dBc/Hz@100kHz. The 5GHz VCO and Motorola MC12210 PLL chip are integrated into a 5GHz-frequency synthesizer. The synthesizer with a spur less than 58dBc has a settling time of 2.1ms for 20MHz step. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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