Fabrication of Nanostructure Using the Oxide Patterning of Atomic Force Microscope
| Autor: | Yuan Te Chao, 趙原德 |
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| Rok vydání: | 2004 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 92 This thesis investigates the fabrication of oxidative nanostructure on the surface of (100) silicon wafer using atomic force microscope (AFM) in the room temperature and the atmospheric condition. The main studies are focused on the influence on the oxidation with the parameters: the bias voltage, the scanning speed and the set-point current. Beside, the thesis compares the difference of the surface oxide using the probe coated with different conducting films, two scanning modes, and different substrates (Ti, GaAs, and Si). According to the experimental result, the height and the width of oxide increase as the bias voltage increases. The height and the width of oxide decrease as the scanning speed increases. The height of oxide decreases as the set-point increases. The oxidization of the probe coated with Pt film is better than that coated with TiN film. The oxidization of the contact mode is better than that of the tapping mode, but the contact mode easily damages the sample. From the comparison of the oxidation of three substrates, Ti is the best, and Si is the worst. As the result of experiments, the optimal experimental parameters of the oxidation can be found to fabricate the much better oxidative nanostructure. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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