Transport properties of strong gate-dot coupled polysilicon single-electron transistor near room temperature
| Autor: | Kuo-Dong Huang, 黃國棟 |
|---|---|
| Rok vydání: | 2004 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 92 Ultrathin oxide gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly coupled (~0.6) polysilicon transistors. Current-voltage measurements show periodic scillations up to 1 volt near room temperature. Analysis of the energy level spacing relates the charging peaks to a quantum dot of size ~8 nm, and also suggests the existence of Coulomb repulsion between electrons in the dot. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|