Design of CMOS Electro-Optical Optoelectronic Circuits
| Autor: | Shr-Cheng Lee, 李仕成 |
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| Rok vydání: | 2003 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 91 This thesis studies three topics: the electro-optic transformation of silicon light emission chip, the driving of LEDs, and the opto-electronic transformation of photoreceiver. The first part studies the manufacturing of CMOS silicon light emission chip. Different mechanisms, structures, and layouts are used to study the efficiency of silicon light emission chip. Matrix silicon light emission chip of pn junctions are designed. Maximum external efficiency obtained is 0.46x10-6 with an area of 1.300x1.430 mm2. The second part is about the driving circuit of CMOS silicon light emission chip. In the driver, the transmission signal is modulated and amplified to supply large control signal current to drive the transmission chip of silicon. The specification of our design is of OC-24 of SONET, with a speed of 1.25Gb/s. The third part is about CMOS photoreceiver. By the standard CMOS processing, photo-diode and transimpedance amplifiers are designed. The photo current detected in the photo-diode is transformed into to a voltage output. Moreover, an exponent amplifier has been proposed to amplify nonlinear photovoltages. Linearity of ninety five percent has been achieved. In the topics mentioned above, they have the same feature in the use of material. Emphasis is made on the opto-electronic integrated circuit using the CMOS process on the silicon substrate. It is convenient to integrate opto-electronic and electro-optic devices on the same chip. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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