The Study of Nitrided SiC Film and Nitrided SiO2 Film for High Performance Electronic Device and Deep Submicron CMOS Applications
| Autor: | Shyh-Fann Ting, 丁世汎 |
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| Rok vydání: | 2002 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 91 In this dissertation, we report the investigation of two light-elements covalently bonded materials i.e. nitrided SiC (SiCN) and nitrided SiO2 (SiON) in the applications of electronic devices and deep submicron CMOS devices, respectively. Firstly, we study the preparation and characteristic of the cubic crystalline nitrided SiC (SiCN) films. The SiCN films have been grown on silicon substrate using various carbon sources by rapid-thermal chemical vapor deposition (RTCVD). The characteristics of the SiCN films grown with Methysilane(SiCH6), Acetylene(C2H4), and Propane(C3H8) are examined and compared. The experimental results show that the differences of chemical composition and chemical bonding state are co-related to the C bonding type of the different carbon source, and the SiCN film employed C3H8 gas possesses the most available for electronic devices and other applications. In addition, correlations between the growing stages to the microstructure of the cubic crystalline SiCN films have been illustrated in detail. Then based on the developed technique, two SiCN thin film devices i.e. SiCN/Si MSM (metal-semiconductor-metal) photo-detector and SiCN/Si pn heterojunction diode (HJD) were fabricated on silicon substrate. The properties of above-mentioned devices are better than the β-SiC MSM photo-detector and HJDs on Si for high temperature applications. We attribute this to the gradual Si-rich SiCN layer formed automatically during depositing SiCN film eliminates the large lattice mismatch (20%) between SiCN and Si substrate, thus improving performances at room temperature. In addition, the lattice matched interface and the wide band gap property of SiCN film provide the SiCN/Si hetero-epitaxial structure as the most promising application for high temperature. Next, we report the ohmic and Schottky contacts to the deposited SiCN films in detail. Two prototypical blue-violet light-emitting devices with SiCN material based on the study are developed. Both PL (photo luminescence) measurement and EL (electro luminescence) photograph are used to evaluate the devices’ optical performance. These experimental results indicate the potential applications of SiCN for advanced blue and ultra-violet (UV) optoelectronic devices. Finally, we study the effect of remote plasma nitridation (RPN) process on characteristics of ultrathin gate dielectric CMOSFETs with the thickness in the range of 18Å~22Å. On the other end, the effects of RPN temperature and He plus on nitrogen-profile within the nitrided SiO2 gate dielectric films have been investigated. Experimental results show that He can enhance the low-temperature RPN process to reduce gate current and thin effective thickness of gate dielectric films, especially for thinner gate dielectric films. In addition, the He plus RPN process can keep the ultra thin gate dielectric film’s integrity even under high-density plasma environment. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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