Electrical Characteristics of Si/SiGe/Si Tunneling Structure
| Autor: | Chun-Wen Kuo, 郭淳文 |
|---|---|
| Rok vydání: | 2003 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 91 An ultra-thin base Si/SiGe/Si heterojuction bipolar transistor (HBT) is theoretically investigated. In such a structure, many advantages of conventional HBT, such as high current gain and high emitter efficiency etc., are reserved, and a small recombination rate and high cutoff frequency are achieved by shortened the base width. In this study, we find the quantum tunneling effect predominates the carrier transport, when the base width is tuned as less than the mean-free-path of materials and comparable with the de Broglie wavelength of carriers. In this situation, Boltzmann transport no more plays the role, instead, the coherent tunneling or quantum Boltzmann transport dominates the electrical property of the device. From our analysis, the collector current shows a novel feature of resonant attributed to the transition from single-barrier tunnel structure to quantum-well structure. It is a testable feature for the transition from classical transport to quantum transport. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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