The study of InGaN illumination intensity affected with post annealing environment
| Autor: | Yu-Ling Shen, 沈郁玲 |
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| Rok vydání: | 2002 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 90 We will add AlN and InN powder in order to change the post annealing environment. We want to understand the quality and optical properties of InGaN/GaN quantum well undergoing post annealing. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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