Investigation of Low Frequency Noise in Deep-Submicron MOSFET
| Autor: | Cheng Nean Chu, 鄭念祖 |
|---|---|
| Rok vydání: | 2002 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 90 Interest in low-frequency noise behavior of deep-submicron Si MOSFETs is first of all drawn by analog applications, where noise minimization is a key issue in circuit sensitivity and detection. Nowadays, low frequency noise receives growing attention from RF community as well. The reason is that low-frequency noise potentially has an impact on the phase noise of nonlinear circuits and devices in the GHz regime. The third motivation for this study is that noise is a sensitive technology parameter, which can be used as a predictive or a diagnostic tool for the durability and reliability of a device. The main theme of this work will focus on the origin of noise in MOSFETs. Based on the unified flicker noise model, several issues will be addressed. Firstly, the impact of device scaling on flicker noise will be investigated. Carrier distribution and channel length dependence of noise behavior will be discussed. Furthermore, we will introduce a 1/f noise technique to extract oxide trap density in the spacer region of a MOSFET. Secondly, attention will be paid to the correlation between different stress modes with flicker noise degradation. It was observed that the non-uniform distribution of threshold voltage along the channel has a large effect on noise degradation. Finally, the dependence of noise on device processing steps will be studied. Guidelines for low-noise processing will be recommended. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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