Interfacial reactions of metals and barrier layers on SiOF, SiOFN, and SiOFC films
| Autor: | Li-Chuan Cheng, 鄭莉娟 |
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| Rok vydání: | 2002 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 90 The interaction of metals and barrier layers with SiOF, SiOFN and SiOFC films at room temperature and after 450℃ annealing were studied by using secondary ion mass spectroscopy (SIMS) and electron spectroscopy for chemical analysis (ESCA).For Al/SiOF samples F diffused readily through the Al film and accumulated at the Al surface to form Al2O3 and AlF3, meanwhile, some Al2O3 and AlF3 were also formed at the Al/SiOF interface. For Al/SiOFC and Al/SiOFN samples Al2O3 and AlF3 were formed at the Al surface, whereas the formation of AlF3 was pronouncedly suppressed, indicating that N and C doping can alleviate F diffusion into Al. For Al/TiN and Al/Ta layers on SiOF, SiOFN, and SiOFC films, the TiN and Ta barriers could not inhibit F diffusing through Al films and accumulating at the Al surface. For Cu/SiOF, Cu/SiOFN, and Cu/SiOFC samples, the presence of F, N, and C could not suppress the penetration of Cu into SiO2 films. For Cu/TiN, Cu/Ta, and Cu/W layers on SiOF, SiOFN, and SiOFC films, both F and Cu diffused into the TiN, Ta, and W barriers with the extent of intermixing among F, Cu, and barriers being most severe for TiN, while F did not diffuse into the Cu layer. The doping of N into SiOF films could reduce the amount of F diffusing into W films. For Pt/Ta on SiOF, SiOFN, and SiOFC films, F diffused into the Ta barrier layer, while it did not further diffuse into Pt. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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