Effects of the Precursor Preparation Conditions on the Characteristics of Sputter-Deposited ITO Thin Films using Sol-Gel Derived Target
| Autor: | Ching-Chang Hsieh, 謝景長 |
|---|---|
| Rok vydání: | 2001 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 89 The objective of this research is to prepare indium tin oxide (ITO) thin films with low electrical resistivity and high visible light transparency by optimization of RF-sputtering process using sol-gel derived ITO targets. In addition, the effects of target preparation methods (solid state reaction vs. sol-gel process) as well as the effects of precursor preparation conditions of the sol-gel derived targets on the characteristics of RF-sputtered ITO thin films are also investigated. From the experimental results, it is shown that ITO thin films prepared by sol-gel derived targets (density approximately 95%) have better electrical properties than those prepared by conventional solid state reaction targets. (The lowest resistivity of the ITO thin films prepared by sol-gel derived targets was half of those of the ITO thin films prepared by conventional solid state reaction targets.) Furthermore, the characteristics of sol-gel derived targets and the ITO thin films prepared from these targets are found to be affected by the preparation conditions of the prepursor solution as well as the properties of the sols: the smaller and the more evenly dispersive of the sols are, the better the characteristics of the targets and the films are. In our sputtering system, we found the optimum operating condition is : mass flow rate of Ar 20 sccm, operating pressure 6×10-3 Torr, sputtering power 5.8W/cm2, substrate temperature 400℃. Combining these process parameters, ITO thin films with optimum properties of resistivity coefficient as low as 1.14×10-4 Ω‧cm and visible light transmittance over 80% are produced. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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