Synthesis and Characterization of Novel Copolymers with Trimethylsilyl Group for Deep-UV Photoresists
| Autor: | Yung-Ching Lin, 林永慶 |
|---|---|
| Rok vydání: | 2000 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 88 A monomer with high thermal stability, N-(4-aceyoxyphenyl) maleimide(APMI), was synthesized from maleic anhydride and p-aminophenol. Free radical copolymerization of APMI and three comonomers with the trimethylsilyl group was performed at 60~70℃in the presence of azobisisobutyronitrile (AIBN) as an initiator in 1,4-dioxane.We obtained the copolymers ⅠP, ⅡP and ⅢP. By removing the acetoxy group of copolymers in a trans-esterification, the acetoxy groups would displace the hydroxyl group of new polymers ⅣP, ⅤP and ⅥP. After that, two different processes were adopted to synthesize the resists. The first one was to mix an inhibitor, o-nitrobenzyl cholate, into the new copolymers. The second resist was synthesized by reacting of the new copolymers with o-nitrobenzyl bromide. Finally preformed the deep-UV photoresists ARe~FRe. The resists, chain-stiffening effect of the cyclic maleimide group was responsible for high thermal stabilities. After irradiation under a deep-ultraviolet (UV) light source and developed by Na2CO3 aqueous (0.01 wt%), the developed patterns showed positive images and exhibited good adhesion to the silicon wafer without using any adhesion promoter. The resolution of the resists was at least 0.8μm and an oxygen-plasma etching rate of 1：5.3 compared with hard-baked HPR-204. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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