The Fabrication and Instability Analysis of Schottky-Contact Gated-Four-Probe Hydrogenated (Deuterium) Amorphous Silicon Thin Film Transistor
| Autor: | Sheng-De Chen, 陳顯德 |
|---|---|
| Rok vydání: | 2000 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 88 The as-deposited a-Si:D TFT with inverted staggered structure has been fabricated successfully and the stability of the as-deposited a-Si:H and as-deposited a-Si:D TFTs under different bias stress conditions were tested. It is demonstrated that the stability of TFT is improved by using a-Si:D as the active layer (channel), but the breakdown voltage of the a-Si:D TFTs using a-SiNX:D as gate insulator is smaller than the a-Si:H TFTs which use a-SiNX:H as gate insulator. By the study of IR spectra of a-SiNX:H and a-SiNX:D layers, the smaller breakdown voltage of a-Si:D TFTs is resulting from that the structure of a-SiNX:D layer is more porous than a-SiNX:H layer. To investigate the sources of degradation of the a-Si:H(D) TFT, a new structure of Schottky-contact gated-four-probe a-Si:H(D) TFT was successfully fabricated. This new sructure can be used to study the intrinsic properties of a-Si:H(D) TFT both electron and hole conduction without distortion. The instability analysis of the as-deposited a-Si:H and as-deposited a-Si:D TFT with Schottky-contact gated-four-probe TFT structure under different biases were tested. It is demonstrated that the instability of TFT under negative bias stress is improved by using a-Si:D as the active layer (channel) because of the decrease of the defects near the upper part of the band edge. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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