Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction
| Autor: | Yueh-Ju Twu, 涂悅朱 |
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| Rok vydání: | 2000 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 88 In the thesis, we studied two topics. One topic is about high density plasma etching. We employed inductively coupled plasma (ICP) system to study etching rate and sidewall profile of AlGaAs and GaN with various conditions, such as the recipe of gases, pressure, and dc bias. We obtained a higher etching rate with the higher composition of Cl2 gas in high pressure condition. But we could not achieve the best anisotropic profile in this case. The other topic is about the photoreflectance (PR) analysis of the Schottky junction. We analyzed the energy level transitions and the Franz-Keldysh oscillation (FKO) of Ni/GaN and Pd/GaN Schottky junctions with PR technique. The Schottky junctions were fabricated by thermal evaporation with substrate temperature of 77K and 300K. The Schottky junctions with low-temperature fabrication processes revealed the higher Schottky barrier height. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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