The Physical Model and Parameter Extractions of Spiral Inductors

Autor: Li-E Li, 李莉娥
Rok vydání: 2000
Druh dokumentu: 學位論文 ; thesis
Popis: 88
The design of high frequency microwave circuits become critical and important as microwave applications, such as portable phone, PC, and wireless network, and so on, … become essential in daily life. The implementation and improvement of good microwave circuit design base on the exact models of all microwave elements. The models are material and process dependent and the method to find out the equivalent circuit of these models is called parameter extraction. Because of the scale reduction in Silicon process, the manufacture of Silicon microwave circuit designs is promising. However, the quality of passive elements, especially the silicon inductors, in traditional silicon processes, the Q value is about 5. However, as the interconnect technology advances, the achievable Q is improving to above 10. Although on-chip inductors have Q''s significantly lower than their discrete counterparts (typical Q''s of about 50). They have been proven to be useful and essential in highly integrated RF systems. Based on above considerations, as well as interests, my master thesis focuses on the spiral inductors of Silicon process and GaAs process that is for comparison. The main topics are: calculation of inductance, from physical model to understand its characteristics, and from the experimental data to extract parameters. Through full analysis and the former experimental database of a specific process, we can thoroughly understand the characteristics of a spiral inductor before manufacturing it. We can know the relations between the inductance, Q value, and dimensions of the each inductor and select a best combination for our purpose. It is not necessary to manufacture all combinations of dimensions to build the database. In additional, we can save a lot of precious time and money.
Databáze: Networked Digital Library of Theses & Dissertations
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