Growth of ITO Films in Low Temperature by Inductively-Coupled-Plasma Assisted Magnetron Sputtering Deposition

Autor: TSAI YING HSIU, 蔡瑛修
Rok vydání: 2000
Druh dokumentu: 學位論文 ; thesis
Popis: 88
Transparent conducting indium tin oxide (ITO) thin films are widely used in daily opto-electronic products, such as the transparent electrode on liquid crystal displays, the anti-radiation protective mirror on the aero and military applications, the anti-static films, and the solar collector, because of their high visible transmittance and good conductivity. The ITO films were deposited on the glass substrates in the traditional procedure and then cut into the suitable size, but the glass substrates have many disadvantages, such as crumbly, weightily, and difficult to make large products. If the ITO films can be deposited on the plastic substrates, it will be much market potential because of they are light weightness, impact resistance, and easy to make difference size. But the plastic substrates can't against high temperature. We have used inductively coupled plasma (ICP) assisted magnetron sputtering to get high quality ITO thin films in low temperature. In this study, we tried to change different experimental parameters of total pressure, oxygen flow rate, substrate bias, and radio frequency power to study how this parameters effect the deposition rate, structure, conductivity, and transmittance in the visible region of ITO films. The experimental results show that, it appears to more easily produce the (222) preferred orientation plane in low pressure, high substrate bias, and high radio frequency power. This is probably due to the bombardment of high-energy ions and the high reactivity of oxygen ions. The transmittance of ITO films with predominant plane (222) seems to shift to short wavelength, because the electrons in the predominant plane (222) of ITO films may have better mobility. In this study, we could got the lowest resistivity of 9.1 10-4W-cm and over 80% of the average transmittance in the visible region at the condition of oxygen flow rate 1.6sccm, pressure 3mtorr, substrate bias 25V, radio frequency power 20W.
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