Study on liquid phase epitaxial growth of RE-treated InAsSbP layers and PIN diode fabrication

Autor: YEN-YU HSU, 許延有
Rok vydání: 2000
Druh dokumentu: 學位論文 ; thesis
Popis: 88
Recently, studies on the effects of doping rare-earth(RE) elements on Ⅲ-Ⅴ compound semiconductors have sttacted much attention since these elements, such as Yb, Gd, and Er exhibit impurity gettering effect due to their strong affinity to oxygen and other group Ⅵ elements. Particularly, it is indicated doping Gd into the InAsSbP layer can present a strong characteristic luminescence with the wavelength fixed at 2-4μm under any temperature variations. This has paved the way for a widespread application of the Er-doped semiconductors in optical communication systems. In this study, we investigate for the first time the influence of RE(Er, Gd, Lu) doping on InAs0.81Sb0.12P0.06 epilayers on (100)-oriented InAs substrates by liquid-phase epitaxy (LPE). The crystal structure, and the related electrical and optical properties of the InAs0.81Sb0.12P0.06epilayers are analyzed. It is found the surface morphologies of the InAs0.81Sb0.12P0.06 layers become poorer since the lattice mismatch increases as the RE(Er, Gd, Lu) adding amount increases. Also, from the Hall measurements, unintentionally doped InAs0.81Sb0.12P0.06 layers always give n-type or p-type conductivity with the background carrier concentration of 4.064*1018cm-3. In addition, the mobilities at room temperature 300K is 1990 cm2/V*s. According to the Hall measurements performed on the sample (Lu: 0.06 wt%) at the room temperature, the carrier mobility is determined to be 753 cm2/V*s. On the other hand, the addition of Gd is difficult to have a stable conduction type. FTIR data are obtained from the InAsSbP grown layers with different growth temperature, 601℃ and 536℃. For the growth temperatures of 601℃ and 536℃, we can get the InAsSbP epilayers with luminescent wavelength of 3.649μm and 3.676μm, respectively. However, RE treatment does not change the luminescent wavelength of epilayer. Finally, both planar-types and mesa-types PIN photo-diodes are fabricated on undoped and RE(Er、Lu、Gd)-doped material structures, respectively, which are compared to further study the influence of RE(Er、Gd 、Lu) doping on the device characteristics. The I-V characteristics indicate forward and reverse bias results of all samples to be very poor.
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