Characterizations of Si-doped GaN Films
| Autor: | Chien-Chih Lu, 盧建志 |
|---|---|
| Rok vydání: | 1999 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 87 The Si-doped GaN films grown by metalorganic chemical vapor deposition have been thoroughly studied by using X-ray 、Raman spectra and PL as well as variable temperature Hall measurement. PL spectra indicate that the near-band edge transition is blue shift and the linewidth is increased as the doping concentration is increased. Moreover, it is also found that the intensity of near-band edge transition becomes stronger, and the intensity ratio of yellow emission to near-band transition drops significantly with Si doping concentration. This could attribute to the substitution of Si atoms on Ga sites, that reduce defects of Ga vacancy, and hence the corresponding yellow emission. Finally, a variable-temperature Hall measurement was also used to characterize the Si doped GaN samples. The measured activation energy is 26.5 meV below conduction band, comparable to thermal energy at 300K, which suggests the Si is an appropriate N-type doping impurity for GaN. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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