Thermal Stability of Cu/PAE-2(low k)/Si with and without Ta-based Barrier Layers
| Autor: | Chau-Chiung Wang, 王超群 |
|---|---|
| Rok vydání: | 1999 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 87 This thesis investigates the thermal stability and electrical properties of the low-k dielectric material of PAE-2 film. The dielectric constant of the PAE-2 film was determined to be 2.9 and the PAE-2 film was thermally stable up to 450oC. The thermal stability of the Cu/PAE-2/Si system is up to 200oC and the effects of Ta and TaN diffusion barrier sandwiched between Cu and PAE-2 layer were investigated using the technique of I-V measurement. It is found that the use of Ta and TaN barriers raised the thermal stability temperature of the system by 200 and 250oC, respectively. Thermal stability of the Cu/PAE-2/SiO2/Si structure was also investigated using the technique of C-V measurement and the bias temperature stress (BTS). It is found that large amount of positive and negative mobile ions were presented in the PAE-2 layer, causing large voltage shift of the C-V curve after BTS stress. Material analyses of SEM, SIMS, XRD, and TDS measurement were used to investigate the degradation mechanism of these MIS capacitors. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|