High-K material Al2O3 thin films as device insulators
| Autor: | C. H. Lu, 呂承翰 |
|---|---|
| Rok vydání: | 1999 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 87 The scaling limit for gate oxide in VLSI is determined by the direct tunneling leakage current. Further device performance improvement can be obtained using a higher dielectric constant material. We have studied the aluminum oxide (Al2O3) as an alternative gate dielectric. In this thesis we report a very simple process to fabricate aluminum oxide (Al2O3) gate dielectric with K (~8 to 9.8) greater than the K of Si3N4. Aluminum oxide (Al2O3) is formed by directed oxidation from thermally evaporated Al. The 4.8nm aluminum oxide (Al2O3) has ~7 orders lower leakage current than equivalent 2.1nm SiO2. Good aluminum oxide (Al2O3)/ Si interface was evidenced by the low interface density of 5*1011 /cm2-ev and compatiable electron effective mobility with thermal SiO2. Good reliability is measured from the small SILC after constant current and constant voltage stress. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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