Ultrathin Dieletrics for ULSI Applications
| Autor: | Huan-Ping Su, 蘇桓平 |
|---|---|
| Rok vydání: | 1995 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 83 In this thesis, we propose three novel ultrathin dielectrics for ULSI applications. For gate dielectrics, a novel technique to fabricate ultrathin gate dielectrics by nitridizing SiO2 only in NH3 at very low pressure (about 0.1 Torr) has been proposed. This dielectrics not only possesses the merits of the conventional nitrided oxides but also have a simple process without the need of re- oxidation. In addition, NH3 can react with SiO2 at low temperature. Hence, this method is promising for the future. An all-new tunneling dielectrics fabricated by oxidizing ultrathin rugged poly-Si has been proposed for the flash memories. This dielectrics possesses high reliability and can be applied for low voltage application. For the dielectrics of the storage capacitors, a novel and simple method is proposed and makes the effective-oxide-thickness of the nitride- based stacked dielectrics be futher scaled down. This dielectrics are constructed by oxidizing very thin nitride at low pressure in a conventional low-pressure- chemical-vapor- deposited (LPCVD) system. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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