The Electrical and Optical Study of the Miniband Transitions of InAsSb/GaSb Type II Superlattices Grown by MOCVD and the Ohmic Contacts.
| Autor: | Ru-Chin Tu, 涂如欽 |
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| Rok vydání: | 1995 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 83 This thesis includes the electrical and optical propertiesminiband transitions of the InAsSb/GaSb type II superlatticesructures grown on GaSb substrates by MOCVD and the omhic contactsthe InAs and GaSb were studied. The quality and solid epilayers were determined by X-ray diffraction pattern. Thelative elements composition of the structures varying with thepth were measured by Auger depth profile. The periods thinknessd growth rate of the superlattices were decided by transmissionectron microscopy.(TEM) By the Fourier transform infrared (FTIR) spectroscopy with biasd without bias, the absorption wavelength and intensity weredulated by the numbers of the period, barrier width, well width, e doping concentration and the width of the cladding layer. The ergy levels of InAsSb/GaSb superlattices were calculated by the nction approximation. The comparison of results, experimental andlculated, were presented. The characteristics of the ohmic contacts of the InAs and GaSb vestigated. The minimal resistance under the optimum annealing d temperatureand was obtained. Finally, the long wavelengthotodetectors were fabricated. The photoresponses were also |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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