Formation of PtSi Contacted Shallow Junctions by Rapid Themal Processing Technique
| Autor: | Yi-Dong Yan, 顏貽棟 |
|---|---|
| Rok vydání: | 1994 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 82 This thesis studies the formation of PtSi contacted p﹢n shallow junctions by ITS(implant-through-silicide)／ITM( implant- through-metal) BF2﹢ implantation and rapid thermal annealing ( RTA)technique. The experimental result shows that RTA annealing results in less boron diffusion and powerful implantation damage removing ability. High performance PtSi/p﹢ n diodes with a junc- tion depth of about 70nm and leakage current density of 2nA/ｃ㎡ can be obtained with ITS／ITM BF2﹢ implantation followed by RTA 750℃/40s annealing. It is found that the junction characteris- tics of the diodes made by ITM scheme are generally superior to that of the diodes made by ITS scheme. The dual implantation ( B﹢ + BF2﹢) scheme was also employed to investigate the effect of F﹢ pre-implantation. It turns out that the F﹢ pre-implan- tion leads to an ultrashallow junction with improved high-tem- perature stability. This is apparently due to pre-amorphization of Si surface, which reduces the channeling effect of subsequent BF2 ﹢ implantation, and more effective fluorine ions incorpation into the PtSi／Si structure. The full rapid thermal processing( RTP), which consists of PtSi silicidation by RTP followed by RTA annealing, was also brief investigated. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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