Study of Pd-Silicided Shallow Junctions
| Autor: | Pei-Fen Chou, 周培芬 |
|---|---|
| Rok vydání: | 1993 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 81 Shallow p-n junctions have been fabricated by implanting BF //2+ ions and P+ ions into Pd silicide (ITS) or Pd metal (ITM) and subsequently annealing at various temperatures in N//2 ambient. The implantation conditions are selected that the dosage is fixed at 5E15 cm**-2 and the implant energy is changed. In this experiment, the implant energy is the key role to obtain a low-leakage diode. The optimun condition of p+n diodes can be achieved by ITM method with BF//2+ implantaion at 100 KeV to 5E15 cm**-2 and anneald at 600.degree.. The reverse current is 1 nA/cm**2 at -5 V. The junction depth measured by spread resistance is 0.08 .mu.m. After comparing the effects of the implantation and non-implantation, the implantation of BF//2+ ions and P+ ions into thin Pd layer can stabilize the Pd silicide film and prevent it from forming the islands during high temperature annealings. The grain sizes of P+-implanted silicide films are relatively larger than those of BF//2+ -implanted silicide film for different annealing temperatures. High-temperature stability of the palladium silicide films and the leakage-current mechanism are discussed in this study. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|