Autor:	Yung-Hui Yu, 游勇輝
Rok vydání:	1993
Druh dokumentu:	學位論文 ; thesis
Popis:	81 The main purpose of this article is to investigate the charac- teristics of (AlInGa)P/InGaP visible laser diodes. we find re- fractuve index by single-oscillator model to calculate the confinement factor aans analyze the effect of strain on trans- parency current density, and discuss the advantages of strained- later structure. Besides, trhree different structures grown by gas source MBE on n+ -GaAs substrate were fabricated and thee electric and optical properties were analyzed respectively. The experimental results shows the halfwidth of the spectrum is 60 angstrom and FAHP is 40. As input current approaches 70mA, the output power saturates due to heating effect.
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://ndltd.ncl.edu.tw/handle/17933838103641993005 Zobrazit plný text záznamu