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Today's nanochips contain billions of transistors on a single die that integrates whole electronic systems as opposed to sub-system parts. Together with ever higher frequency performances resulting from transistor scaling and material improvements, it thus become possible to include on the same silicon chip analog functionalities and wireless communication circuitry that was once reserved to only an elite class of compound III-V semiconductors. It appears that the last stretch of Moore's scaling down to 5 nm range, these systems will only become more capable and faster, due to novel types of transistor geometries and functionalities as well as better integration of passive elements, antennas and novel isolation approaches. Accordingly, this dissertation is an example to how RF-CMOS integration may benefit from the use of a novel multi-gate transistors called FinFETs or Double Gate Metal Oxide Semiconductor Field Effect Transistors (DGMOSFETs). More specifically, this research is to validate how the performance of the radio frequency wireless communication integrated circuits can be improved by the use of this novel transistor architecture.To this end, in this dissertation, a wide range of radio frequency integrated circuits have been investigated in DG-MOSFETs which include Oscillators, On Off Keying (OOK) Modulator, Power Amplifier, Low Noise Amplifier, Envelope Detector, RF Mixer and Charge Pump Phase Frequency Detector. In all cases, the use of DG-MOSFET devices lead to reduction of transistor count and circuit complexity, while also resulting in tunable circuits owing to local back-gate control available in this device structure. Hence this work provides a unique insight as to how modest geometry changes and 3D device engineering may result in significant gains in analog/RF circuit engineering in the last stretch of Moore's scaling. |
