| Popis: |
The next generation of electronic and optical devices require high quality, crystalline materials in order to obtain relevant properties for novel devices. Two classes of materials offer unique material properties that can satisfy the requirements for next generation devices. These two classes of materials are the transition metal nitrides (TMNs) and transition metal oxides (TMOs). These materials offer electronic properties that range from conductive, metallic, materials to semiconducting and insulating materials. However, for many optical and electronic applications, the band structure and crystalline symmetries must be preserved. This work examines the growth and characterization of the TMN materials AlN and ScN as well as the TMO materials VO2 and TiO2. In all these materials, the crystalline structure plays and extremely important role in the desired properties. In addition, incorporation of other impurities can detrimentally impact the functionality of these film materials. In order to minimize the impurity incorporation and maintain the crystalline structure, the growth of AlN, ScN, VO2, and TiO2 films by various deposition techniques were examined and optimized. This allowed growth of high quality TMN and TMO materials that resulted in characterization and optimization of the relevant optical, electronic, and structural properties and, somewhat, the degree to which these properties could be tuned through growth conditions. |
