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In a world where modern micro- and nanoelectronics are reaching their limits, aspotlight has been focused on novel two-dimensional and layered materials. It iscritically important to understand the electronic transport properties of potentiallyuseful semiconductors in order to gauge their applicability for electronic devices. Thisdissertation explores layered semiconductor materials and characterizes their gatetransport properties within the context of field effect transistor devices. One projectexamines MoO3 and its versatility as a layered gate dielectric material integrated ontoa WSe2 field effect transistor. The following project concentrates on the anisotropicand ambipolar transport properties of ReSe2. Lastly, the subthreshold regime of thegate characteristic curve is explored for ambipolar devices, illustrating how to tunethis behavior in WSe2 devices with respect to different contact metals. Overall, theelectronic characterization of these materials will aid in developing new, functionalnano-scale devices. |
