Ultraviolet-assisted oxidation and nitridation of hafnium and hafnium aluminum alloys as potential gate dielectrics for metal oxide semiconductor applications

Autor:	Essary, Chad Robert.
Jazyk:	angličtina
Rok vydání:	2004
Popis:	Thesis (Ph. D.)--University of Florida, 2004. Title from title page of source document. Document formatted into pages; contains 130 pages. Includes vita. Includes bibliographical references.
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://purl.fcla.edu/fcla/etd/UFE0006612 Zobrazit plný text záznamu