Electrical properties of ultra thin Al₂O₃ and HfO₂ films as gate dielectrics in MOS technology
| Autor: | Mehta, Vishal R. |
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| Jazyk: | angličtina |
| Rok vydání: | 2002 |
| Druh dokumentu: | Electronic Thesis or Dissertation. |
| Popis: | Thesis (M.S.) -- New Jersey Institute of Technology, Committee for the Interdisciplinary Program in Materials Science and Engineering, 2002. Includes bibliographical references. Also available via the World Wide Web. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
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