Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications

Autor:	Madan, Anuj.
Jazyk:	angličtina
Rok vydání:	2008
Předmět:	Extreme environments. Silicon. Germanium. Modulation-doped field-effect transistors. Field-effect transistors.
Zdroj:	Available online, Georgia Institute of Technology.
Popis:	Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008. Committee Chair: John D. Cressler; Committee Member: John Papapolymerou; Committee Member: Shyh-Chiang Shen.
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://hdl.handle.net/1853/24758 Zobrazit plný text záznamu