Reliability study of enhancement-mode AIGaN/GaN HEMT fabricated with fluorine plasma treatment technology

Autor:	Yi, Congwen.
Jazyk:	angličtina
Rok vydání:	2008
Předmět:	Modulation-doped field-effect transistors. Gallium nitride Plasma chemistry.
Zdroj:	View abstract or full-text..
Popis:	Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2008. Includes bibliographical references (leaves 76-87). Also available in electronic version.
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20YI Zobrazit plný text záznamu