Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition
| Autor: | Ohta, Hiroyuki, Nagashima, Atsushi, Hori, Masaru, Goto, Toshio |
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| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Druh dokumentu: | Article(publisher) |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.1337939 |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
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