SiGe-On-Insulator (SGOI): Two Structures for CMOS Application

Autor:	Cheng, Zhiyuan, Jung, Jongwan, Lee, Minjoo L., Nayfeh, Hasan, Pitera, Arthur J., Hoyt, Judy L., Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Rok vydání:	2003
Předmět:	strained-Si SiGe SiGe-on-Insulator SGOI strained-Si on SGOI SSOI SOI dual-channel surface channel MOSFET mobility bonding etch-back
Druh dokumentu:	Článek
Popis:	Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and p-MOSFET’s on those two structures respectively. Device characteristics are presented. The devices show enhancement on both electron and hole mobilities. Singapore-MIT Alliance (SMA)
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://hdl.handle.net/1721.1/3671 Zobrazit plný text záznamu