X-ray lithographic alignment and overlay applied to double-gate MOSFET fabrication
| Autor: | Meinhold, Mitchell W., 1972 |
|---|---|
| Rok vydání: | 2003 |
| Předmět: | |
| Druh dokumentu: | Diplomová práce |
| Popis: | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003. Includes bibliographical references (leaves 117-118). Double-gate MOSFETs represent a significant solution to transistor scaling problems and promise a dramatic improvement in both performance and power consumption. In this work, a planar lithographic process is presented that is capable of producing double-gate MOSFET (DGFET) gate structures with 50 nm physical gate length and by Mitchell W. Meinhold. Ph.D. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|