| Autor: |
Hoffmann, M., Slesazeck, S., Mikolajick, T. |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Druh dokumentu: |
Text<br />Conference Material |
| DOI: |
10.1109/DRC.2018.8442139 |
| Popis: |
The use of ferroelectric negative capacitance (NC) has been proposed as a promising way to reduce the power dissipation in nanoscale devices [1]. According to single-domain (SD) Landau theory, a hysteresis-free NC state in a ferroelectric might be stabilized in the presence of depolarization fields below a certain critical film thickness tF, SD. However, it is well-known that depolarization fields will cause the formation of domains in ferroelectrics to reduce the depolarization energy [2], which is rarely considered in the literature on NC [3]. The improvident use of SD Landau theory to model NC devices seems to be the main reason for the large discrepancy between experimental data and the current theory [4]. Here, we will show by simulation how anti-parallel domain formation can strongly limit the stability of the NC state in a metal-ferroelectric-insulator-metal (MFIM) structure, which is schematically shown in Fig. 1. |
| Databáze: |
Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|
