| Autor: |
Alibakhshikenari, M., Virdee, B.S., Khalily, M., See, C.H., Abd-Alhameed, Raed, Falcone, F., Denidni, T.A., Limiti, E. |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
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| Druh dokumentu: |
Článek |
| DOI: |
10.1109/LAWP.2020.3010865 |
| Popis: |
This letter investigates the feasibility of designing a high gain on-chip antenna on silicon technology for subterahertz applications over a wide-frequency range. High gain is achieved by exciting the antenna using an aperture fed mechanism to couple electromagnetics energy from a metal slot line, which is sandwiched between the silicon and polycarbonate substrates, to a 15-element array comprising circular and rectangular radiation patches fabricated on the top surface of the polycarbonate layer. An open ended microstrip line, which is orthogonal to the metal slot-line, is implemented on the underside of the silicon substrate. When the open ended microstrip line is excited it couples the signal to the metal slot-line which is subsequently coupled and radiated by the patch array. Measured results show the proposed on-chip antenna exhibits a reflection coefficient of less than-10 dB across 0.290-0.316 THz with a highest gain and radiation efficiency of 11.71 dBi and 70.8%, respectively, occurred at 0.3 THz. The antenna has a narrow stopband between 0.292 and 0.294 THz. The physical size of the presented subterahertz on-chip antenna is 20 × 3.5 × 0.126 mm3. |
| Databáze: |
Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
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