Voltage-Dependent Gating Characteristics of the K + Channel KAT1 Depend on the N and C Termini

Autor:	Marten, Irene, Hoshi, Toshinori
Zdroj:	Proceedings of the National Academy of Sciences of the United States of America, 1997 Apr 01. 94(7), 3448-3453.
Databáze:	JSTOR Journals
Externí odkaz:	https://www.jstor.org/stable/41844 Zobrazit plný text záznamu