Transmission Electron Microscopy of Vanadium-Silicon (V$_3$Si) at Low Temperatures

Autor:	Goringe, M. J., Valdré, U.
Zdroj:	Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1966 Nov . 295(1441), 192-216.
Databáze:	JSTOR Journals
Externí odkaz:	https://www.jstor.org/stable/2415631 Zobrazit plný text záznamu