THERMO‐ELECTRIC STUDY OF THE TRENCH‐GATE POWER VDMOS TRANSISTOR

Autor:	Zeng, J., Mawby, P.A., Towers, M.S., Board, K.
Zdroj:	COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1994, Vol. 13, Issue 4, pp. 735-742.
Databáze:	Emerald Insight
Externí odkaz:	http://www.emeraldinsight.com/doi/10.1108/eb051891 Zobrazit plný text záznamu