A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLE‐CRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE

Autor:	Park, Changhae, Klein, Kevin M., Tasch, Al F., Simonton, Robert B., Novak, Steve, Lux, Gayle
Zdroj:	COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1991, Vol. 10, Issue 4, pp. 331-340.
Databáze:	Emerald Insight
Externí odkaz:	http://www.emeraldinsight.com/doi/10.1108/eb051710 Zobrazit plný text záznamu