Demonstrating existence of one suitable oxide phase concurrent with formation of Ti/p-Si Schottky junction by comparing direct calculation with analysis

Autor:	Shahryari, Mehran, Shakib, Mohammad Homayoon, Askari, Mohammad Bagher, Nanekarani, Shahryar, Saeidi Nejad, Sanaz, Bagheri, Sedigheh
Zdroj:	World Journal of Engineering, 2017, Vol. 14, Issue 4, pp. 284-288.
Databáze:	Emerald Insight
Externí odkaz:	http://www.emeraldinsight.com/doi/10.1108/WJE-07-2016-0022 Zobrazit plný text záznamu