Study on high temperature model based on the n-Channel planar 4H-SiC MOSFET
| Autor: | Tang, Zhenyu, Tang, Xiaoyan, Pu, Shi, Zhang, Yimeng, Zhang, Hang, Zhang, Yuming, Bo, Song |
|---|---|
| Zdroj: | Circuit World, 2021, Vol. 48, Issue 4, pp. 401-411. |
| Databáze: | Emerald Insight |
| Externí odkaz: |
|