Characterization of a novel 10T SRAM cell with improved data stability and delay performance for 20-nm tri-gated FinFET technology

Autor: Limachia, Mitesh Jethabhai, Thakker, Rajesh A., Kothari, Nikhil J.
Zdroj: Circuit World, 2018, Vol. 44, Issue 4, pp. 187-194.
Databáze: Emerald Insight